Vacancy defects in epitaxial thin film CuGaSe sub(2) and CuInSe sub(2)

Vacancy defects in epitaxial thin film CuGaSe sub(2) and CuInSe sub(2)

Epitaxial thin film CuGaSe sub(2) and CuInSe sub(2) samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe sub(2), whe...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-08, Vol.86 (6)
Hauptverfasser: Korhonen, E, Kuitunen, K, Tuomisto, F, Urbaniak, A, Igalson, M, Larsen, J, Gutay, L, Siebentritt, S, Tomm, Y
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter
Copper
COPPER GLASS ALLOYS
COPPER INDIUM SELENIDE
Crystal defects
CRYSTAL GROWTH
Crystals
DEFECTS
Divacancies
Epitaxial growth
EPITAXY
LATTICE DEFECTS
THIN FILMS
VACANCIES
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Zusammenfassung:Epitaxial thin film CuGaSe sub(2) and CuInSe sub(2) samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe sub(2), whereas, in CuGaSe sub(2), the only observed vacancy defect is the Cu-Se divacancy.
ISSN:1098-0121
1550-235X