Doping Level of Boron-Doped Diamond Electrodes Controls the Grafting Density of Functional Groups for DNA Assays

The impact of different doping levels of boron-doped diamond on the surface functionalization was investigated by means of electrochemical reduction of aryldiazonium salts. The grafting efficiency of 4-nitrophenyl groups increased with the boron levels (B/C ratio from 0 to 20 000 ppm). Controlled gr...

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Veröffentlicht in:ACS applied materials & interfaces 2015-09, Vol.7 (34), p.18949-18956
Hauptverfasser: Švorc, Ĺubomír, Jambrec, Daliborka, Vojs, Marian, Barwe, Stefan, Clausmeyer, Jan, Michniak, Pavol, Marton, Marián, Schuhmann, Wolfgang
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Sprache:eng
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Zusammenfassung:The impact of different doping levels of boron-doped diamond on the surface functionalization was investigated by means of electrochemical reduction of aryldiazonium salts. The grafting efficiency of 4-nitrophenyl groups increased with the boron levels (B/C ratio from 0 to 20 000 ppm). Controlled grafting of nitrophenyldiazonium was used to adjust the amount of immobilized single-stranded DNA strands at the surface and further on the hybridization yield in dependence on the boron doping level. The grafted nitro functions were electrochemically reduced to the amine moieties. Subsequent functionalization with a succinic acid introduced carboxyl groups for subsequent binding of an amino-terminated DNA probe. DNA hybridization significantly depends on the probe density which is in turn dependent on the boron doping level. The proposed approach opens new insights for the design and control of doped diamond surface functionalization for the construction of DNA hybridization assays.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.5b06394