Out-of-plane magnetoresistance in ferromagnet/graphene/ferromagnet spin-valve junctions

Out-of-plane spin-injection and detection through naturally stacked graphene layers were investigated in ferromagnet/graphene/ferromagnet (FGF) junctions. We obtained a maximum magnetoresistance (MR) of 4.6% at T = 4.2 K in the junction of a four-layer graphene insertion, having a very small area junction-resistance product of 0.2 [Omega] mu m super(2). According to resistance-temperature and current-voltage characteristics, the graphene layer in the FGF junction acted as a metal-like insertion rather than as an insulating barrier. A lower value for the interfacial spin asymmetry coefficient ( gamma = 0.25 + or - 0.05) obtained from the fitting of variations with interfacial resistance implies that the spin-injection efficiency along the out-of-plane direction was reduced by spin-flip scattering at graphene/ferromagnet interfaces. Our results showed that highly transparent graphene/ferromagnet interfaces with crystalline ferromagnet (FM) electrodes are required to achieve higher spin-injection efficiency through the graphene layer in a FGF junction along the out-of-plane direction.