S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination

In this paper, we critically review the usual explanation of the blue shift in the temperature dependence of the light emission, which is commonly observed for polar GaInN/GaN quantum wells at intermediate temperatures. We demonstrate that this blue shift is not necessarily caused by a thermally induced change of occupation in an inhomogeneously broadened density of states. Instead, different energy dependencies of radiative and nonradiative lifetimes may lead to an energy dependence of the internal quantum efficiency strongly influencing the peak position of the luminescence: the piezoelectric fields within the quantum well induce an approximately exponential relationship between the electron-hole overlap matrix element for the radiative transition between the lowest quantized states and the respective transition energy. Via time-resolved photoluminescence spectroscopy, we observe a corresponding exponential energy dependence of radiative lifetimes at low temperatures and almost energy independent nonradiative lifetimes toward room temperature throughout the emission of polar single quantum wells. An analytical model is demonstrated, predicting a significant blue shift of several 10 meV for polar and a negligible shift for nonpolar GaInN/GaN quantum wells at the transition from high to low internal quantum efficiency due to the energy-dependent competition between radiative and nonradiative recombination processes. This model consistently explains the lack of a blue shift in nonpolar quantum wells grown on m-plane bulk GaN as well as a reduced characteristic temperature for the onset of the blue shift after artificial defect generation via argon ion implantation.