The relationship between processing parameters and the performance of novel amorphous silicon–indium–zinc oxide thin film transistors

The processing parameter dependence of the performance of amorphous silicon-indium-zinc-oxide (a-SIZO) films was systematically investigated for Thin Film Transistors (TFTs). The SIZO thin films were prepared on a SiO 2/ p-Si substrate using 2 wt% Si-doped IZO (2SIZO) ceramic target through an RF-magnetron sputtering process with various process parameters, such as RF power and oxygen partial pressure. The composition analysis of the target was measured by Induced-Coupled Plasma (ICP) and X-Ray fluorescence (XRF). The electrical performance of 2SIZO films were relatively changed by the processing parameters. The electrical performance of the 2SIZO-TFTs confirmed that μ FE decreaseswith an increasing oxygen partial pressure and decreasing RF-power.