Electrical properties of chemical solution deposited (Bi0.9RE0.1)(Fe0.975Cu0.025)O3−δ (RE=Ho and Tb) thin films

Electrical properties of chemical solution deposited (Bi0.9RE0.1)(Fe0.975Cu0.025)O3−δ (RE=Ho and Tb) thin films

Pure BiFeO3 (BFO) and (Bi0.9RE0.1)(Fe0.975Cu0.025)O3−δ (RE=Ho and Tb, denoted by BHFCu and BTFCu) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The BHFCu and BTFCu thin films showed improved electrical and ferroelectric properties comp...

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Veröffentlicht in:Ceramics international 2013-01, Vol.39, p.S189-S193
Hauptverfasser: Kim, Jin Won, Raghavan, Chinanmbedu Murugesan, Kim, Youn-Jang, Oak, Jeong-Jung, Kim, Hae Jin, Kim, Won-Jeong, Kim, Myong Ho, Song, Tae Kwon, Kim, Sang Su
Format: Artikel
Sprache:eng
Schlagworte:
A. Films
C. Electrical properties
C. Ferroelectric properties
Ceramics
Coercive force
Density
Deposition
Electrical properties
Ferroelectric materials
Leakage current
Thin films
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Zusammenfassung:Pure BiFeO3 (BFO) and (Bi0.9RE0.1)(Fe0.975Cu0.025)O3−δ (RE=Ho and Tb, denoted by BHFCu and BTFCu) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The BHFCu and BTFCu thin films showed improved electrical and ferroelectric properties compared to pure BFO thin film. Among them, the BTFCu thin film exhibited large remnant polarization (2Pr), low coercive field (2Ec) and reduced leakage current density, which are 89.15C/cm2 and 345kV/cm at 1000kV/cm and 5.38×10−5A/cm2 at 100kV/cm, respectively.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2012.10.060