MOCVD for solar cells, a transition towards a chamberless inline process

MOCVD has been associated with batch processing of III–V opto-electronic devices for decades, with epitaxial structures deposited on up to 200mm diameter wafers. Recent development in thin film PV has seen the gap in conversion efficiencies closing in on that of the commonly found multicrystalline Si wafer based PV. To further improve the conversion efficiency of thin film PV towards the theoretical limits of single junction solar cells requires a technique such as MOCVD with scalability potential. Preliminary results on the development of a chamberless inline process are reported for up to 15cm wide float glass, progressively coating each layer in the CdTe solar cell as the heated substrate passes under each coating head in turn and entirely at atmospheric pressure. Emphasis is made on ensuring that the chamberless coating heads can be operated safely using a combination of nitrogen curtain flows and a balanced exhaust pressure system. Results are also presented on the exclusion of oxygen and moisture from the coating area, achieved using the same gas flow isolation process. This paper also reviews the achievements made to-date in the transfer of the high efficiency batch MOCVD produced CdTe solar cell to the chamberless inline process demonstrating device quality thin films deposition. •A chamberless coating head was designed for scale-up of MOCVD as an inline process.•Suitable containment was achieved using CFD modelling and leak testing tools, measuring leak rates as low as 2×10−10mbarls−1.•Cadmium compounds were deposited with oxygen below detectable levels.•Good transfer of layer quality for thin film PV were reached with good dopant and alloying capabilities.•Set of chamberless coating heads can be placed sequentially to deposit the full structure of a CdTe thin film PV.