20 000 h reliable operation of 100 μm stripe width 650 nm broad area lasers at more than 1.1 W output power

Reliability tests for highly efficient high-power 650 nm broad area diode lasers will be presented. The devices have a 5 nm thick single GaInP quantum well as an active layer, which is embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers. The devices with a stripe width of 100 mu m and a cavity length of 1.5 mm were soldered on diamond submounts and mounted on standard C-mounts for an efficient heat removal. The test was performed at a temperature of 15 [degrees]C over a first period of 10 000 h at 1.1 W followed by a second period of 10 000 h at 1.2 W. Based on the aging test and assuming a 60% confidence level, the lower limit of the mean time to failure of 87 000 h was determined for the devices.