Preparation and electrical properties of Bi2Zn2/3Nb4/3O7 thin films deposited at room temperature for embedded capacitor applications

Bi2Zn2/3Nb4/3O7 thin films were deposited at room temperature on Pt/Ti/SiO2/Si (100) and polymer-based copper clad laminate (CCL) substrates by pulsed laser deposition. The Bi2Zn2/3Nb4/3O7 thin films were deposited in situ with no intentional heating under an oxygen pressure of 4 Pa and then post-annealed at 150 C for 20 min. The films were amorphous as confirmed by XRD analysis. The surface roughness of the substrates had an influence on the electrical properties of the dielectric films, especially on the leakage current. Bi2Zn2/3Nb4/3O7 thin films deposited on Pt/Ti/SiO2/Si (100) substrates exhibited superior dielectric characteristics. The dielectric constant and loss tangent were 59.8 and 0.008 at 10 kHz, respectively. The leakage current density was 2.5 x 10 exp(-7) A/cm2 at an applied electric field of 400 kV/cm. Bi2Zn2/3Nb4/3O7 thin films deposited on CCL substrates had a dielectric constant of 60 and loss tangent of 0.018, respectively. The leakage current density was < 1 x 10 exp(-6) A/cm2 at 200 kV/cm.