Dielectric properties of composition spread SiO2–Al2O3 mixed phase thin films deposited at room temperature by off-axis RF magnetron sputtering

Dielectric properties of composition spread SiO2–Al2O3 mixed phase thin films deposited at room temperature by off-axis RF magnetron sputtering

The dielectric properties of composition spread SiO2-Al2O3 thin films, deposited by off-axis radio-frequency magnetron sputtering at room temperature, were investigated to obtain optimised compositions with low dielectric constants and losses. The specific points (compositions) showing superior diel...

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Veröffentlicht in:Ceramics international 2012-01, Vol.38, p.S79-S79
Hauptverfasser: Kim, Y H, Shin, D W, Kim, J S, Song, J-H, Yoon, S-J, Park, K B, Choi, J-W
Format: Artikel
Sprache:eng
Schlagworte:
Deposition
Dielectric constant
Dielectric properties
Magnetron sputtering
Silicon dioxide
Silicon substrates
Spreads
Thin films
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Zusammenfassung:The dielectric properties of composition spread SiO2-Al2O3 thin films, deposited by off-axis radio-frequency magnetron sputtering at room temperature, were investigated to obtain optimised compositions with low dielectric constants and losses. The specific points (compositions) showing superior dielectric properties of low dielectric constants (8.13 and 9.12) and losses (tan delta approximately 0.02) at 1 MHz were found at a distance of 25.0 mm (Al2Si3O8) and 42 mm (Al2.4Si3O8) apart from the SiO2 target side on 75 mm x 25 mm sized Pt/Ti/SiO2/Si (100) substrates, respectively. The specific thin films were amorphous and the compositions were Al2Si3O8 (k about 8.13) and Al2.4Si3O8 (k about 9.12).
ISSN:0272-8842
DOI:10.1016/j.ceramint.2011.04.054