Oxygen Vacancy Creation, Drift, and Aggregation in TiO sub(2)-Based Resistive Switches at Low Temperature and Voltage

Oxygen Vacancy Creation, Drift, and Aggregation in TiO sub(2)-Based Resistive Switches at Low Temperature and Voltage

Transmission electron microscopy with in situ biasing has been performed on TiN/single-crystal rutile TiO sub(2)/Pt resistive switching structures. Three elementary processes essential for switching: i) creation of oxygen vacancies by electrochemical reactions at low temperatures (

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Veröffentlicht in:Advanced functional materials 2015-05, Vol.25 (19), p.2876-2883
Hauptverfasser: Kwon, Jonghan, Sharma, Abhishek A, Bain, James A, Picard, Yoosuf N, Skowronski, Marek
Format: Artikel
Sprache:eng
Schlagworte:
Devices
Drift
Electric fields
Faults
Rutile
Switching
Titanium dioxide
Vacancies
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Zusammenfassung:Transmission electron microscopy with in situ biasing has been performed on TiN/single-crystal rutile TiO sub(2)/Pt resistive switching structures. Three elementary processes essential for switching: i) creation of oxygen vacancies by electrochemical reactions at low temperatures (
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201500444