About the defect structure in differently doped PZT ceramics: A temperature dependent positron lifetime study

About the defect structure in differently doped PZT ceramics: A temperature dependent positron lifetime study

Pure and doped PZT ceramics (PZT:La+Fe, PZT:La, PZT:Gd, PIC 151 and with 0.1, 0.25, 0.5, 1.0mol% Fe doped samples) have been examined by Positron Annihilation Lifetime Spectroscopy (PALS) in the range of temperatures between 150 and 375K. It was found that the defect-related lifetime increased with...

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Veröffentlicht in:Ceramics international 2014-08, Vol.40 (7), p.9127-9131
Hauptverfasser: Drogowska, K., Elsayed, M., Krause-Rehberg, R., Balogh, A.G.
Format: Artikel
Sprache:eng
Schlagworte:
A. Implantation
Agglomeration
B. Defects
Ceramics
D. Perovskites
D. PZT
Defects
Iron
Lead zirconate titanates
Positron annihilation
Positrons
Vacancies
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Zusammenfassung:Pure and doped PZT ceramics (PZT:La+Fe, PZT:La, PZT:Gd, PIC 151 and with 0.1, 0.25, 0.5, 1.0mol% Fe doped samples) have been examined by Positron Annihilation Lifetime Spectroscopy (PALS) in the range of temperatures between 150 and 375K. It was found that the defect-related lifetime increased with increasing temperature, indicating vacancy-like defects. With increasing Fe doping, a loss of vacancy agglomerations was observed, as well as a weaker dependence of lifetime on temperature.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2014.01.127