Fabrication and characterizations of Zn1−xCoxO bulk ceramics prepared by solid state reaction combined with spark plasma sintering
Zn 1−x Co x O (x = 0.01, 0.05 and 0.1) bulk ceramics were prepared through a two-step, solid state reaction method combined with spark plasma sintering technique. The single phase Zn 1−x Co x O powders were synthesized using ZnO and Co 3 O 4 at 935 °C in air for 3 h. The Zn 1−x Co x O bulks were pre...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2012, Vol.23 (8), p.1477-1484 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Zn
1−x
Co
x
O (x = 0.01, 0.05 and 0.1) bulk ceramics were prepared through a two-step, solid state reaction method combined with spark plasma sintering technique. The single phase Zn
1−x
Co
x
O powders were synthesized using ZnO and Co
3
O
4
at 935 °C in air for 3 h. The Zn
1−x
Co
x
O bulks were prepared at sintering temperature from 900 to 1,100 °C for 5 min by SPS. The relative density of Zn
1−x
Co
x
O bulk ceramics sintered at 1,100 °C is higher than 99% of the theoretical value. The Structure, composition analysis, optical absorption, Raman and XPS measurements revealed that the Co
2+
substituted Zn
2+
ions and was incorporated into the lattice of ZnO in both of the single phase Zn
1−x
Co
x
O powders and bulk ceramics. Room- and low-temperature magnetization measurements reveal a paramagnetic behavior and that the paramagnetic Co amount is smaller than the nominal Co concentration for all of Zn
1−x
Co
x
O samples at 4 K. The paramagnetic magnetism of bulk ceramics is apparently larger than that of powders with the same composition. The electrical properties measurements reveal that the Co concentration has a slight influence on the electrical properties of Zn
1−x
Co
x
O bulk ceramics. The carriers concentration is about 1 × 10
20
cm
−3
and with the Co concentration increases the resistivity slightly increases from 3.56 × 10
−3
(x = 0.01) to 5.58 × 10
−3
(x = 0.1) Ωcm. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-011-0614-4 |