Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD

Controlled synthesis of graphite at low temperatures is a desirable process for a number of applications. Here, we present a study on the growth of thin graphite films on polycrystalline Ni films at low temperatures, about 380 °C, using inductively coupled plasma enhanced chemical vapor deposition....

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-01, Vol.3 (20), p.5192-5198
Hauptverfasser:	Cheng, Lanxia, Yun, Kayoung, Lucero, Antonio, Huang, Jie, Meng, Xin, Lian, Guoda, Nam, Ho-Seok, Wallace, Robert M., Kim, Moon, Venugopal, Archana, Colombo, Luigi, Kim, Jiyoung
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Graphene Graphite Inductively coupled plasma Nickel Silicon substrates Synthesis Thin films
Online-Zugang:	Volltext
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