The pitting behavior of silicon nitride ion beam assisted deposited coatings on aluminum
The pitting potential of silicon nitride ion beam assisted deposited (IBAD) coatings on aluminum in deaerated 0.1 M NaCl solutions increased with coating thickness for coatings ranging from 0.01 to 2.0 μm. Rutherford backscattering spectroscopy and optical techniques showed the films to be nearly st...
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Veröffentlicht in: | Surface & coatings technology 1992-04, Vol.51 (1), p.30-34 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The pitting potential of silicon nitride ion beam assisted deposited (IBAD) coatings on aluminum in deaerated 0.1 M NaCl solutions increased with coating thickness for coatings ranging from 0.01 to 2.0 μm. Rutherford backscattering spectroscopy and optical techniques showed the films to be nearly stoichiometric Si
3N
4. X-ray photoelectron spectroscopy showed that the surface of the IBAD samples is composed of Si
3N
4, SiO
2, and a silicon oxynitride species. Pit propagation beneath the coatings proceeds by blister formation and rupture. |
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ISSN: | 0257-8972 1879-3347 |
DOI: | 10.1016/0257-8972(92)90210-2 |