The pitting behavior of silicon nitride ion beam assisted deposited coatings on aluminum

The pitting potential of silicon nitride ion beam assisted deposited (IBAD) coatings on aluminum in deaerated 0.1 M NaCl solutions increased with coating thickness for coatings ranging from 0.01 to 2.0 μm. Rutherford backscattering spectroscopy and optical techniques showed the films to be nearly st...

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Veröffentlicht in:Surface & coatings technology 1992-04, Vol.51 (1), p.30-34
Hauptverfasser: Natishan, P.M., McCafferty, E., Donovan, E.P., Brown, D.W., Hubler, G.K.
Format: Artikel
Sprache:eng
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Zusammenfassung:The pitting potential of silicon nitride ion beam assisted deposited (IBAD) coatings on aluminum in deaerated 0.1 M NaCl solutions increased with coating thickness for coatings ranging from 0.01 to 2.0 μm. Rutherford backscattering spectroscopy and optical techniques showed the films to be nearly stoichiometric Si 3N 4. X-ray photoelectron spectroscopy showed that the surface of the IBAD samples is composed of Si 3N 4, SiO 2, and a silicon oxynitride species. Pit propagation beneath the coatings proceeds by blister formation and rupture.
ISSN:0257-8972
1879-3347
DOI:10.1016/0257-8972(92)90210-2