A bicolor photodetector of ultraviolet radiation based on a low-dimensional ZnCdS/ZnMgS/GaP heterostructure

A bicolor photodetector of ultraviolet radiation based on a ZnCdS/ZnMgS/GaP heterostructure is designed and analyzed. At low bias voltages, the detector has a narrowband response at a wavelength of 350 nm, which is determined by the composition of the ZnCdS quantum well. As the bias increases to 80–100 V, the maximum sensitivity of the detector is shifted to a wavelength of 450 nm with subsequent rapid decrease. In this case, the spectral sensitivity characteristic of the detector covers the region of the maximum pigmentation effect of solar radiation.