Fabrication of Transparent CuCrO sub(2):Mg/ZnO p-n Junctions Prepared by Magnetron Sputtering on an Indium Tin Oxide Glass Substrate
Transparent p-n junctions composed of zinc oxide and magnesium-doped copper-chromium oxide thin films were prepared using radio-frequency (RF) magnetron sputtering deposition on indium-tin oxide glass substrates. The temperature of the substrate during deposition was varied to examine differences in...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2013-05, Vol.52 (5S2) |
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| container_issue | 5S2 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 52 |
| creator | Chen, Li-Fong Wang, Yung-Po Chiu, Te-Wei Shih, Wen-Ching Wu, Mu-Shiang |
| description | Transparent p-n junctions composed of zinc oxide and magnesium-doped copper-chromium oxide thin films were prepared using radio-frequency (RF) magnetron sputtering deposition on indium-tin oxide glass substrates. The temperature of the substrate during deposition was varied to examine differences in the diode characteristics of the current-voltage response effect. The crystalline structure of the diode films was verified using X-ray diffraction (XRD) analysis. The ratio of the forward current to the reverse current reached 85.9 in the range of +4 to -4 V at a deposition temperature of 450 [degrees]C. The p-n junction diode film had an optical transparency above 75% for wavelengths in the visible range. |
| doi_str_mv | 10.7567/JJAP.52.05EC02 |
| format | Article |
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The temperature of the substrate during deposition was varied to examine differences in the diode characteristics of the current-voltage response effect. The crystalline structure of the diode films was verified using X-ray diffraction (XRD) analysis. The ratio of the forward current to the reverse current reached 85.9 in the range of +4 to -4 V at a deposition temperature of 450 [degrees]C. 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The temperature of the substrate during deposition was varied to examine differences in the diode characteristics of the current-voltage response effect. The crystalline structure of the diode films was verified using X-ray diffraction (XRD) analysis. The ratio of the forward current to the reverse current reached 85.9 in the range of +4 to -4 V at a deposition temperature of 450 [degrees]C. The p-n junction diode film had an optical transparency above 75% for wavelengths in the visible range.</description><subject>DEPOSITION</subject><subject>DIODES</subject><subject>FABRICATION</subject><subject>Glass</subject><subject>GLASSES</subject><subject>Indium-Tin</subject><subject>Magnetron sputtering</subject><subject>OXIDES</subject><subject>P-n junctions</subject><subject>SPUTTERING</subject><subject>THIN FILMS</subject><subject>ZINC OXIDE</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqVzE1Lw0AUheFBFIwfW9d3WRdJJ9NMUt1JaNVASaFZuSmTZBpG0ps4dwZ03x9uCv4BV4cXHg5jDzGPMplm86J42UZSRFyuci4uWBAvkixMeCovWcC5iMPkSYhrdkP0OWUqkzhgp7WqrWmUMwPCcIDKKqRRWY0Ocp_bEsjXM_H4vOnmH1jCGCIUHpuzJ9hafbYt1D-wUR1qZ6eb3eid09ZgB1MphHdsjT9CZRDKb9NqeO0VEex8Tc4qp-_Y1UH1pO__9pbN1qsqfwtHO3x5TW5_NNTovleoB0_7OF3KpUj5Ml38g_4Clbha5A</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Chen, Li-Fong</creator><creator>Wang, Yung-Po</creator><creator>Chiu, Te-Wei</creator><creator>Shih, Wen-Ching</creator><creator>Wu, Mu-Shiang</creator><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130501</creationdate><title>Fabrication of Transparent CuCrO sub(2):Mg/ZnO p-n Junctions Prepared by Magnetron Sputtering on an Indium Tin Oxide Glass Substrate</title><author>Chen, Li-Fong ; Wang, Yung-Po ; Chiu, Te-Wei ; Shih, Wen-Ching ; Wu, Mu-Shiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_16858260863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>DEPOSITION</topic><topic>DIODES</topic><topic>FABRICATION</topic><topic>Glass</topic><topic>GLASSES</topic><topic>Indium-Tin</topic><topic>Magnetron sputtering</topic><topic>OXIDES</topic><topic>P-n junctions</topic><topic>SPUTTERING</topic><topic>THIN FILMS</topic><topic>ZINC OXIDE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Li-Fong</creatorcontrib><creatorcontrib>Wang, Yung-Po</creatorcontrib><creatorcontrib>Chiu, Te-Wei</creatorcontrib><creatorcontrib>Shih, Wen-Ching</creatorcontrib><creatorcontrib>Wu, Mu-Shiang</creatorcontrib><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Li-Fong</au><au>Wang, Yung-Po</au><au>Chiu, Te-Wei</au><au>Shih, Wen-Ching</au><au>Wu, Mu-Shiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of Transparent CuCrO sub(2):Mg/ZnO p-n Junctions Prepared by Magnetron Sputtering on an Indium Tin Oxide Glass Substrate</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2013-05-01</date><risdate>2013</risdate><volume>52</volume><issue>5S2</issue><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Transparent p-n junctions composed of zinc oxide and magnesium-doped copper-chromium oxide thin films were prepared using radio-frequency (RF) magnetron sputtering deposition on indium-tin oxide glass substrates. The temperature of the substrate during deposition was varied to examine differences in the diode characteristics of the current-voltage response effect. The crystalline structure of the diode films was verified using X-ray diffraction (XRD) analysis. The ratio of the forward current to the reverse current reached 85.9 in the range of +4 to -4 V at a deposition temperature of 450 [degrees]C. The p-n junction diode film had an optical transparency above 75% for wavelengths in the visible range.</abstract><doi>10.7567/JJAP.52.05EC02</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2013-05, Vol.52 (5S2) |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | DEPOSITION DIODES FABRICATION Glass GLASSES Indium-Tin Magnetron sputtering OXIDES P-n junctions SPUTTERING THIN FILMS ZINC OXIDE |
| title | Fabrication of Transparent CuCrO sub(2):Mg/ZnO p-n Junctions Prepared by Magnetron Sputtering on an Indium Tin Oxide Glass Substrate |
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