Fabrication of Transparent CuCrO sub(2):Mg/ZnO p-n Junctions Prepared by Magnetron Sputtering on an Indium Tin Oxide Glass Substrate

Transparent p-n junctions composed of zinc oxide and magnesium-doped copper-chromium oxide thin films were prepared using radio-frequency (RF) magnetron sputtering deposition on indium-tin oxide glass substrates. The temperature of the substrate during deposition was varied to examine differences in the diode characteristics of the current-voltage response effect. The crystalline structure of the diode films was verified using X-ray diffraction (XRD) analysis. The ratio of the forward current to the reverse current reached 85.9 in the range of +4 to -4 V at a deposition temperature of 450 [degrees]C. The p-n junction diode film had an optical transparency above 75% for wavelengths in the visible range.