Current--Voltage Model of Bulk Fin Field-Effect Transistors with a Half-Circle Corner

The drain current of fully depleted (FD) nanoscale bulk FinFETs with the top-channel of a half-circle shape was modeled, for the first time, systematically in all operational regions and compared with the data obtained from three-dimensional (3D) device simulation. In the current model of these devi...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-06, Vol.52 (6), p.064202-064202-8
Hauptverfasser:	Choi, Byung-Kil, Jeong, Min-Kyu, Kwon, Hyuck-In, Park, Byung-Gook, Lee, Jong-Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Computer simulation Devices Drains Mathematical models Penetration Three dimensional Threshold voltage
Online-Zugang:	Volltext
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