Current--Voltage Model of Bulk Fin Field-Effect Transistors with a Half-Circle Corner

The drain current of fully depleted (FD) nanoscale bulk FinFETs with the top-channel of a half-circle shape was modeled, for the first time, systematically in all operational regions and compared with the data obtained from three-dimensional (3D) device simulation. In the current model of these devices, it is very important to have accurate threshold voltages for side-channels and top-channel, and take the field penetration effect induced by the top-gate near the top of a fin body into account the threshold voltage ($V_{\text{th}}$) models for top-channels and side-channels, respectively. So, we obtained successfully the $V_{\text{th}}$ models [$V_{\text{th0,t}}$ ($V_{\text{th}}$ model of top-channel at a low drain bias) and $V_{\text{th0,s}}$ ($V_{\text{th}}$ model of side-channels at a low drain bias)] considering the field penetration effect for both channels (top- and side-channels) to model the current behaviors in the doped bulk FinFETs with the top-channel of a half-circle shape. Our compact current model with $V_{\text{th0,t}}$ and $V_{\text{th0,s}}$ predicted accurately the current behaviors of the devices and shown a good agreement with 3D simulation.