Cathodoluminescence spectra of Ga-In-O polycrystalline films fabricated by molecular precursor method

Cathodoluminescence (CL) spectra were measured from polycrystalline Ga-In-O (GIO) films prepared by the molecular precursor method (MPM). Bandgap-energy (Eg) and conductivity were successfully controlled by changing in the mixing ratio of the Ga and In precursor solutions. Although none of the films exhibited a near-band-edge emission, their CL emissions exhibited energy shifts by reflecting changes in Eg and ligand field in the GIO alloys. The results indicate a practical use of MPM-grown GIO films for deep ultraviolet optoelectronic devices.