Ga(In)N Photonic Crystal Light Emitters with Semipolar Quantum Wells

We present directional photonic crystal light emitters produced as periodic semipolar GaInN quantum wells, grown by selective area metal organic vapour phase epitaxy. The emitted angle-dependent modal structure for sub-micrometer stripes and embedded photonic crystal structures is analyzed experimentally in detail, and the introduction of an Al 0.12 Ga 0.88 N cladding layer is investigated. We provide a complete simulation based on the finite-difference time-domain method, which allows to identify all leaky modes as well as their spectral and angular dependence.