Peculiarities of boron distribution in as-grown boron-doped diamond

Boron doped diamond (BDD) single crystals have been grown under conditions of high isostatic pressure by the temperature gradient method. Numerous equilateral triangles were found on the fluorescence images of {111}-diamond facets. Structural peculiarities of BDD were investigated by JEM-2010 transm...

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Veröffentlicht in:	Materials research express 2014-09, Vol.1 (3), p.35905-12
Hauptverfasser:	Blank, V D, Kulnitskiy, B A, Perezhogin, I A, Terentiev, S A, Nosukhin, S A, Kuznetsov, M S
Format:	Artikel
Sprache:	eng
Schlagworte:	Attachment Boron boron-doped diamond crystal structure defects Diamonds diffusion Distortion Electron energy loss spectroscopy fluorescence imaging Lattices Superconductivity transmission electron microscopy Triangles
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Beschreibung
Zusammenfassung:	Boron doped diamond (BDD) single crystals have been grown under conditions of high isostatic pressure by the temperature gradient method. Numerous equilateral triangles were found on the fluorescence images of {111}-diamond facets. Structural peculiarities of BDD were investigated by JEM-2010 transmission electron microscope with GIF Quantum attachment for electron energy loss spectroscopy (EELS). High resolution image of diamond lattice revealed some distorted {111}-layers. EELS testifies the presence of boron in distorted regions of diamond lattice. The crystallographic features of BDD and their connection with the superconductivity are discussed.
ISSN:	2053-1591 2053-1591
DOI:	10.1088/2053-1591/1/3/035905