Effect of MeV Electron Beam Irradiation on Graphene Grown by Thermal Chemical Vapor Deposition

Effect of MeV Electron Beam Irradiation on Graphene Grown by Thermal Chemical Vapor Deposition

We explored the effect of MeV electron beam irradiation (MEBI) under ambient conditions on the growth of graphene by thermal chemical vapor deposition. X-ray photoelectron spectroscopy and Raman spectroscopy clearly revealed that the propagation of irradiation mediated-defects and oxidation on graph...

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Veröffentlicht in:Japanese Journal of Applied Physics 2013-12, Vol.52 (12), p.125104-125104-4
Hauptverfasser: Song, Wooseok, Lee, Su Il, Kim, Yooseok, Jung, Dae Sung, Jung, Min Wook, An, Ki-Seok, Park, Chong-Yun
Format: Artikel
Sprache:eng
Schlagworte:
Chemical vapor deposition
Electrical resistivity
Electron beams
Graphene
Irradiation
Raman spectroscopy
Resistivity
Transport
X-rays
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Zusammenfassung:We explored the effect of MeV electron beam irradiation (MEBI) under ambient conditions on the growth of graphene by thermal chemical vapor deposition. X-ray photoelectron spectroscopy and Raman spectroscopy clearly revealed that the propagation of irradiation mediated-defects and oxidation on graphene transferred onto SiO 2 (300 nm)/Si(001) occurred simultaneously after MEBI. In addition, a positive shift in the charge-neutral Dirac point (CNDP) and suppression of electrical conductivity near the CNDP were observed by electrical transport measurements, indicating p-type doping and the opening of a band-gap of graphene after MEBI.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.125104