A numerical analysis of a MOCVD process for the growth of GaN nanowires using GaCl sub(3) and NH sub(3)

In this paper, the analysis of horizontal cold wall reactor for GaN nanowires growing from GaCl sub(3) and NH sub(3) at atmospheric pressure conditions has been studied. It aims to provide better understanding of the MOCVD process especially of deposition process of GaN nanowires as well as fluid dynamics inside the reactor. Numerical solution to transport model coupled with 2D geometry using CFD shows several results including GaCl sub(3) thermal decomposition at different temperature conditions, velocity and temperature distribution as well as concentration profiles into reactor. Afterwards experimental parameters of temperature and gases flow were set to growth of GaN nanowires. Scanning electron microscopy analysis shows the microstructural characteristics of GaN nanowires. ( copyright 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)