The role of the interface structure on the growth of nonpolar (101¯0) and semipolar (112¯2¯) ZnO on (112) LaAlO3 substrates

Growth of nonpolar (101¯0) and semipolar (112¯2¯) ZnO on (112) LaAlO3 (LAO) substrates can be obtained by annealing the substrate surface in vacuum and oxygen ambient conditions prior to ZnO deposition, respectively. We investigated the origin of the two different growth relationships by inspecting...

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Veröffentlicht in:	Materials letters 2013-10, Vol.109, p.237-239
Hauptverfasser:	Tian, Jr-Sheng, Wu, Yue-Han, Wang, Wei-Lin, Yen, Tzu-Chun, Ho, Yen-Teng, Chang, Li
Format:	Artikel
Sprache:	eng
Schlagworte:	Accommodation Annealing Annular Atomic force microscopy Deposition Epitaxial growth Flats Interfaces LaAlO3 Lattices Origins oxygen Structural transmission electron microscopy Zinc oxide ZnO
Online-Zugang:	Volltext
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