The role of the interface structure on the growth of nonpolar (101¯0) and semipolar (112¯2¯) ZnO on (112) LaAlO3 substrates

Growth of nonpolar (101¯0) and semipolar (112¯2¯) ZnO on (112) LaAlO3 (LAO) substrates can be obtained by annealing the substrate surface in vacuum and oxygen ambient conditions prior to ZnO deposition, respectively. We investigated the origin of the two different growth relationships by inspecting their interface in atomic scale using high angle annular dark field scanning transmission electron microscopy. (101¯0) ZnO was grown on flat (112)LAO surface due to the similar atomic configurations and small lattice mismatch between them at the interface, and (112¯2¯) ZnO was grown on a faceted surface with (001)LAO and (110)LAO facets on which accommodation growth of both (112¯0) ZnO and (0001¯) ZnO are consistent with [11¯00]ZnO//[11¯0]LAO. •Growth control of (101¯0) and (112¯2¯) ZnO on (112) LaAlO3 was shown by annealing.•The surface structure of (112) LAO can be modified by annealing.•(101¯0) ZnO was grown on flat (112)LAO plane due to similar atomic configuration.•(112¯2¯) ZnO was grown on the surface with atomic (001)LAO and (110)LAO facets.