Optical third harmonic generation in the magnetic semiconductor EuSe

Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the band gap at 2.1-2.6 eV and at higher energies up to eV. EuSe is a magnetic semiconductor crystalizing in centrosymmetric structure of rock-salt type with the point group m3m. For this symmetry the cryst...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-01, Vol.85 (3), Article 035206
Hauptverfasser: Lafrentz, M., Brunne, D., Kaminski, B., Pavlov, V. V., Pisarev, R. V., Henriques, A. B., Yakovlev, D. R., Springholz, G., Bauer, G., Bayer, M.
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Sprache:eng
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Zusammenfassung:Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the band gap at 2.1-2.6 eV and at higher energies up to eV. EuSe is a magnetic semiconductor crystalizing in centrosymmetric structure of rock-salt type with the point group m3m. For this symmetry the crystallographic and magnetic-field-induced THG nonlinearities are allowed in the electric-dipole approximation. Using temperature, magnetic field, and rotational anisotropy measurements, the crystallographic and magnetic-field-induced contributions to THG were unambiguously separated. Strong resonant magnetic-field-induced THG signals were measured at energies in the range of 2.1-2.6 eV and 3.1-3.6 eV for which we assign to transitions from 4f super(7) to 4f super(6)5d super(1) bands, namely involving 5d(t sub(2g)) and 5d(e sub(g)) states.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.85.035206