Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer

AlN was grown by a sublimation method on 6H-SiC. We found the grown AlN layer is easily separated from the substrate when Si powder is added to the AlN source powder. The formation of AlSiN layer with the Si content of 15% at the AlN/6H-SiC interface was confirmed by energy-dispersive X-ray spectros...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-08, Vol.52 (8), p.08JA07-08JA07-2
Hauptverfasser:	Nishino, Katsushi, Nakauchi, Jun, Hayashi, Kotaro, Tsukihara, Masashi
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Diffraction Formations Silicon Silicon substrates Spectroscopy Sublimation X-ray diffraction X-rays
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container_end_page	08JA07-2
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container_title	Japanese Journal of Applied Physics
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creator	Nishino, Katsushi Nakauchi, Jun Hayashi, Kotaro Tsukihara, Masashi
description	AlN was grown by a sublimation method on 6H-SiC. We found the grown AlN layer is easily separated from the substrate when Si powder is added to the AlN source powder. The formation of AlSiN layer with the Si content of 15% at the AlN/6H-SiC interface was confirmed by energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). This AlSiN layer causes the separation of AlN.
doi_str_mv	10.7567/JJAP.52.08JA07
format	Article
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	Aluminum nitride Diffraction Formations Silicon Silicon substrates Spectroscopy Sublimation X-ray diffraction X-rays
title	Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer
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