Self-Separation of Sublimation-Grown AlN with AlSiN Buffer Layer

AlN was grown by a sublimation method on 6H-SiC. We found the grown AlN layer is easily separated from the substrate when Si powder is added to the AlN source powder. The formation of AlSiN layer with the Si content of 15% at the AlN/6H-SiC interface was confirmed by energy-dispersive X-ray spectros...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-08, Vol.52 (8), p.08JA07-08JA07-2
Hauptverfasser:	Nishino, Katsushi, Nakauchi, Jun, Hayashi, Kotaro, Tsukihara, Masashi
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Diffraction Formations Silicon Silicon substrates Spectroscopy Sublimation X-ray diffraction X-rays
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	AlN was grown by a sublimation method on 6H-SiC. We found the grown AlN layer is easily separated from the substrate when Si powder is added to the AlN source powder. The formation of AlSiN layer with the Si content of 15% at the AlN/6H-SiC interface was confirmed by energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). This AlSiN layer causes the separation of AlN.
ISSN:	0021-4922 1347-4065
DOI:	10.7567/JJAP.52.08JA07