Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion-Implantation-Induced Relaxation Technique

We have experimentally studied a new H + -ion-induced relaxation technique for compressive-strained SiGe layers on a buried oxide layer (BOX) for high-performance p-channel source heterojunction devices, to improve the crystalline quality of the ion-implanted SiGe layers, using the very steep recoil energy $E_{\text{R}}$ distribution of H + ions. In addition, we have compared the H + -ion-induced relaxation phenomena of the strained SiGe with the O + -ion-induced one. We have experimentally shown that the strained SiGe layers can also be fully relaxed even by H + ion implantation, using Raman spectroscopy analysis. In addition, the obtained Raman spectroscopy data show that the crystalline quality of H + -ion-implanted SiGe layers can be improved and is much more uniform, compared with that of the O + -ion-implanted area, as expected. However, high-dose H + ion implantation locally causes the splitting of strained SiGe layers from the BOX layer, which is the technical limitation of H + ions.