Etching of pentacene film using atomic hydrogen generated on heated tungsten
An etching method for organic semiconductor materials called atomic hydrogen treatment was investigated. In this method, the high-density atomic hydrogen is generated on a heated tungsten surface by a catalytic cracking reaction. Also pentacene films are etched at 0.07 nm/s in tungsten temperature o...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2014-05, Vol.53 (5), p.58002-1-058002-3 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | An etching method for organic semiconductor materials called atomic hydrogen treatment was investigated. In this method, the high-density atomic hydrogen is generated on a heated tungsten surface by a catalytic cracking reaction. Also pentacene films are etched at 0.07 nm/s in tungsten temperature of 1700 °C and sample holder of 60 °C. It is considered that the patterning of organic films using atomic hydrogen at low temperatures without plasma damage is useful for the realization of flexible semiconductor devices. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.53.058002 |