Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
► XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. ► The valence band offset was determined to be 0.38 ± 0.15 eV and a type- II heterojunction with a conduction band offset of 2.43±0.15 eV was obtained. XPS was used to measure the energy discontinuity in the GaN/d...
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| Veröffentlicht in: | Applied surface science 2011-07, Vol.257 (18), p.8110-8112 |
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| creator | Shi, K. Liu, X.L. Li, D.B. Wang, J. Song, H.P. Xu, X.Q. Wei, H.Y. Jiao, C.M. Yang, S.Y. Song, H. Zhu, Q.S. Wang, Z.G. |
| description | ► XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. ► The valence band offset was determined to be 0.38 ± 0.15 eV and a type- II heterojunction with a conduction band offset of 2.43±0.15 eV was obtained.
XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38±0.15eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43±0.15eV was obtained. |
| doi_str_mv | 10.1016/j.apsusc.2011.04.118 |
| format | Article |
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XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38±0.15eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43±0.15eV was obtained.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2011.04.118</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conduction band offset ; Diamonds ; Discontinuity ; Electron and ion emission by liquids and solids; impact phenomena ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Energy use ; Exact sciences and technology ; Gallium nitrides ; GaN/diamond heterojunction ; Heterojunctions ; Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions ; Interfaces, heterostructures, nanostructures ; Offsets ; Photoemission and photoelectron spectra ; Physics ; Valence band ; Valence band offset ; X-ray photoelectron spectroscopy ; X-rays ; XPS</subject><ispartof>Applied surface science, 2011-07, Vol.257 (18), p.8110-8112</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c435t-e773b28072b9d0af0c1dfe7b4b19e04300b48d1364d3fe5e85cffd208208d3483</citedby><cites>FETCH-LOGICAL-c435t-e773b28072b9d0af0c1dfe7b4b19e04300b48d1364d3fe5e85cffd208208d3483</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2011.04.118$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,782,786,3554,27933,27934,46004</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24266486$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Shi, K.</creatorcontrib><creatorcontrib>Liu, X.L.</creatorcontrib><creatorcontrib>Li, D.B.</creatorcontrib><creatorcontrib>Wang, J.</creatorcontrib><creatorcontrib>Song, H.P.</creatorcontrib><creatorcontrib>Xu, X.Q.</creatorcontrib><creatorcontrib>Wei, H.Y.</creatorcontrib><creatorcontrib>Jiao, C.M.</creatorcontrib><creatorcontrib>Yang, S.Y.</creatorcontrib><creatorcontrib>Song, H.</creatorcontrib><creatorcontrib>Zhu, Q.S.</creatorcontrib><creatorcontrib>Wang, Z.G.</creatorcontrib><title>Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy</title><title>Applied surface science</title><description>► XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. ► The valence band offset was determined to be 0.38 ± 0.15 eV and a type- II heterojunction with a conduction band offset of 2.43±0.15 eV was obtained.
XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38±0.15eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43±0.15eV was obtained.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conduction band offset</subject><subject>Diamonds</subject><subject>Discontinuity</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Energy use</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>GaN/diamond heterojunction</subject><subject>Heterojunctions</subject><subject>Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions</subject><subject>Interfaces, heterostructures, nanostructures</subject><subject>Offsets</subject><subject>Photoemission and photoelectron spectra</subject><subject>Physics</subject><subject>Valence band</subject><subject>Valence band offset</subject><subject>X-ray photoelectron spectroscopy</subject><subject>X-rays</subject><subject>XPS</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kMFKxDAQQIMouK7-gYdeBC_tJk3aZi-CiK7CohcVT4Y0mbApbVOTVti_N-suHoWBGTJvMslD6JLgjGBSLppMDmEKKssxIRlmGSH8CM0Ir2haFJwdo1nElimjND9FZyE0GJM8dmfo81220CtIatnrxBkTYIwpWcnnhbayc_F0AyN410y9Gq3rkw5kmDzopN4mH6mX22TYuNFBC2r0sR-G3yIoN2zP0YmRbYCLQ56jt4f717vHdP2yerq7XaeK0WJMoaponXNc5fVSY2mwItpAVbOaLAEzinHNuCa0ZJoaKIAXyhidYx5DU8bpHF3v7x28-5ogjKKzQUHbyh7cFAQpeVGVRUlZRNkeVfGNwYMRg7ed9FtBsNjpFI3Y6xQ7nQIzEXXGsavDBhmUbI2XvbLhbzZneVkyXkbuZs9B_O63BS-CsjvD2vroRWhn_1_0A3OUjkg</recordid><startdate>20110701</startdate><enddate>20110701</enddate><creator>Shi, K.</creator><creator>Liu, X.L.</creator><creator>Li, D.B.</creator><creator>Wang, J.</creator><creator>Song, H.P.</creator><creator>Xu, X.Q.</creator><creator>Wei, H.Y.</creator><creator>Jiao, C.M.</creator><creator>Yang, S.Y.</creator><creator>Song, H.</creator><creator>Zhu, Q.S.</creator><creator>Wang, Z.G.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110701</creationdate><title>Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy</title><author>Shi, K. ; Liu, X.L. ; Li, D.B. ; Wang, J. ; Song, H.P. ; Xu, X.Q. ; Wei, H.Y. ; Jiao, C.M. ; Yang, S.Y. ; Song, H. ; Zhu, Q.S. ; Wang, Z.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c435t-e773b28072b9d0af0c1dfe7b4b19e04300b48d1364d3fe5e85cffd208208d3483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conduction band offset</topic><topic>Diamonds</topic><topic>Discontinuity</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Energy use</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>GaN/diamond heterojunction</topic><topic>Heterojunctions</topic><topic>Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions</topic><topic>Interfaces, heterostructures, nanostructures</topic><topic>Offsets</topic><topic>Photoemission and photoelectron spectra</topic><topic>Physics</topic><topic>Valence band</topic><topic>Valence band offset</topic><topic>X-ray photoelectron spectroscopy</topic><topic>X-rays</topic><topic>XPS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shi, K.</creatorcontrib><creatorcontrib>Liu, X.L.</creatorcontrib><creatorcontrib>Li, D.B.</creatorcontrib><creatorcontrib>Wang, J.</creatorcontrib><creatorcontrib>Song, H.P.</creatorcontrib><creatorcontrib>Xu, X.Q.</creatorcontrib><creatorcontrib>Wei, H.Y.</creatorcontrib><creatorcontrib>Jiao, C.M.</creatorcontrib><creatorcontrib>Yang, S.Y.</creatorcontrib><creatorcontrib>Song, H.</creatorcontrib><creatorcontrib>Zhu, Q.S.</creatorcontrib><creatorcontrib>Wang, Z.G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shi, K.</au><au>Liu, X.L.</au><au>Li, D.B.</au><au>Wang, J.</au><au>Song, H.P.</au><au>Xu, X.Q.</au><au>Wei, H.Y.</au><au>Jiao, C.M.</au><au>Yang, S.Y.</au><au>Song, H.</au><au>Zhu, Q.S.</au><au>Wang, Z.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy</atitle><jtitle>Applied surface science</jtitle><date>2011-07-01</date><risdate>2011</risdate><volume>257</volume><issue>18</issue><spage>8110</spage><epage>8112</epage><pages>8110-8112</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>► XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. ► The valence band offset was determined to be 0.38 ± 0.15 eV and a type- II heterojunction with a conduction band offset of 2.43±0.15 eV was obtained.
XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38±0.15eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43±0.15eV was obtained.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2011.04.118</doi><tpages>3</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Conduction band offset Diamonds Discontinuity Electron and ion emission by liquids and solids impact phenomena Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Energy use Exact sciences and technology Gallium nitrides GaN/diamond heterojunction Heterojunctions Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Interfaces, heterostructures, nanostructures Offsets Photoemission and photoelectron spectra Physics Valence band Valence band offset X-ray photoelectron spectroscopy X-rays XPS |
| title | Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy |
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