Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy

► XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. ► The valence band offset was determined to be 0.38 ± 0.15 eV and a type- II heterojunction with a conduction band offset of 2.43±0.15 eV was obtained. XPS was used to measure the energy discontinuity in the GaN/d...

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Veröffentlicht in:	Applied surface science 2011-07, Vol.257 (18), p.8110-8112
Hauptverfasser:	Shi, K., Liu, X.L., Li, D.B., Wang, J., Song, H.P., Xu, X.Q., Wei, H.Y., Jiao, C.M., Yang, S.Y., Song, H., Zhu, Q.S., Wang, Z.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conduction band offset Diamonds Discontinuity Electron and ion emission by liquids and solids impact phenomena Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Energy use Exact sciences and technology Gallium nitrides GaN/diamond heterojunction Heterojunctions Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Interfaces, heterostructures, nanostructures Offsets Photoemission and photoelectron spectra Physics Valence band Valence band offset X-ray photoelectron spectroscopy X-rays XPS
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Zusammenfassung:	► XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. ► The valence band offset was determined to be 0.38 ± 0.15 eV and a type- II heterojunction with a conduction band offset of 2.43±0.15 eV was obtained. XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38±0.15eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43±0.15eV was obtained.
ISSN:	0169-4332 1873-5584
DOI:	10.1016/j.apsusc.2011.04.118