Effect of gadolinium doping on the electronic band structure of europium oxide

Effect of gadolinium doping on the electronic band structure of europium oxide

High quality films of EuO and Eu sub(0.96) Gd sub(0.04) O were grown on p-type Si(100) via pulsed laser deposition. X-ray-diffraction results show that the addition of Gd changes the growth texture from [001] to [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the X...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-01, Vol.85 (1), p.014406-014406, Article 014406
Hauptverfasser: Colón Santana, Juan A., An, Joonhee M., Wu, Ning, Belashchenko, Kirill D., Wang, Xianjie, Liu, Pan, Tang, Jinke, Losovyj, Yaroslav, Yakovkin, I. N., Dowben, P. A.
Format: Artikel
Sprache:eng
Schlagworte:
Band spectra
Band structure of solids
Condensed matter
Gadolinium
Inverse
Oxides
Photoemission
Surface layer
Texture
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Zusammenfassung:High quality films of EuO and Eu sub(0.96) Gd sub(0.04) O were grown on p-type Si(100) via pulsed laser deposition. X-ray-diffraction results show that the addition of Gd changes the growth texture from [001] to [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the X points in Gd-doped EuO, indicating that the band gap in EuO is indirect. Combined photoemission and inverse photoemission measurements show an apparent transition from n-type to p-type behavior, which is likely due to band bending near the polar (111) surface.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.85.014406