Increasing single mode power of 1.3-μm VCSELs by output coupling optimization

Increasing single mode power of 1.3-μm VCSELs by output coupling optimization

We report on the single mode emission power enhancement of 1.3-μm VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80°C,...

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Veröffentlicht in:Optics express 2015-05, Vol.23 (9), p.10900-10904
Hauptverfasser: Mereuta, A, Caliman, A, Sirbu, A, Iakovlev, V, Mickovic, Z, Suruceanu, G, Kapon, E
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container_end_page 10904
container_issue 9
container_start_page 10900
container_title Optics express
container_volume 23
creator Mereuta, A
Caliman, A
Sirbu, A
Iakovlev, V
Mickovic, Z
Suruceanu, G
Kapon, E
description We report on the single mode emission power enhancement of 1.3-μm VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80°C, with more than 30 dB single mode suppression ratio, have been obtained.
doi_str_mv 10.1364/OE.23.010900
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1680957772</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1680957772</sourcerecordid><originalsourceid>FETCH-LOGICAL-c329t-2d92b873da21327708ffee2612caf1140a5b452de06da8728bc66cc8a556eef93</originalsourceid><addsrcrecordid>eNpNkLtOwzAUhi0EoqWwMSOPDCT4kvgyoipApYoOXFbLcU5QUBKHOBEqz8Yz8Ey0akEs5z_D9__Dh9A5JTHlIrleZTHjMaFEE3KApptMooQoefjvn6CTEN4IoYnU8hhNWKqFpiqdoodF63qwoWpf8fbUgBtfAO78B_TYl5jGPPr-avDL_DFbBpyvsR-Hbhyw82NXb2u-G6qm-rRD5dtTdFTaOsDZPmfo-TZ7mt9Hy9XdYn6zjBxneohYoVmuJC8so5xJSVRZAjBBmbMlpQmxaZ6krAAiCqskU7kTwjll01QAlJrP0OVut-v9-whhME0VHNS1bcGPwVChiE6llGyDXu1Q1_sQeihN11eN7deGErM1aFaZYdzsDG7wi_3ymDdQ_MG_yvgPedtrVw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1680957772</pqid></control><display><type>article</type><title>Increasing single mode power of 1.3-μm VCSELs by output coupling optimization</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Alma/SFX Local Collection</source><creator>Mereuta, A ; Caliman, A ; Sirbu, A ; Iakovlev, V ; Mickovic, Z ; Suruceanu, G ; Kapon, E</creator><creatorcontrib>Mereuta, A ; Caliman, A ; Sirbu, A ; Iakovlev, V ; Mickovic, Z ; Suruceanu, G ; Kapon, E</creatorcontrib><description>We report on the single mode emission power enhancement of 1.3-μm VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80°C, with more than 30 dB single mode suppression ratio, have been obtained.</description><identifier>ISSN: 1094-4087</identifier><identifier>EISSN: 1094-4087</identifier><identifier>DOI: 10.1364/OE.23.010900</identifier><identifier>PMID: 25969185</identifier><language>eng</language><publisher>United States</publisher><ispartof>Optics express, 2015-05, Vol.23 (9), p.10900-10904</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c329t-2d92b873da21327708ffee2612caf1140a5b452de06da8728bc66cc8a556eef93</citedby><cites>FETCH-LOGICAL-c329t-2d92b873da21327708ffee2612caf1140a5b452de06da8728bc66cc8a556eef93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,27903,27904</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/25969185$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Mereuta, A</creatorcontrib><creatorcontrib>Caliman, A</creatorcontrib><creatorcontrib>Sirbu, A</creatorcontrib><creatorcontrib>Iakovlev, V</creatorcontrib><creatorcontrib>Mickovic, Z</creatorcontrib><creatorcontrib>Suruceanu, G</creatorcontrib><creatorcontrib>Kapon, E</creatorcontrib><title>Increasing single mode power of 1.3-μm VCSELs by output coupling optimization</title><title>Optics express</title><addtitle>Opt Express</addtitle><description>We report on the single mode emission power enhancement of 1.3-μm VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80°C, with more than 30 dB single mode suppression ratio, have been obtained.</description><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpNkLtOwzAUhi0EoqWwMSOPDCT4kvgyoipApYoOXFbLcU5QUBKHOBEqz8Yz8Ey0akEs5z_D9__Dh9A5JTHlIrleZTHjMaFEE3KApptMooQoefjvn6CTEN4IoYnU8hhNWKqFpiqdoodF63qwoWpf8fbUgBtfAO78B_TYl5jGPPr-avDL_DFbBpyvsR-Hbhyw82NXb2u-G6qm-rRD5dtTdFTaOsDZPmfo-TZ7mt9Hy9XdYn6zjBxneohYoVmuJC8so5xJSVRZAjBBmbMlpQmxaZ6krAAiCqskU7kTwjll01QAlJrP0OVut-v9-whhME0VHNS1bcGPwVChiE6llGyDXu1Q1_sQeihN11eN7deGErM1aFaZYdzsDG7wi_3ymDdQ_MG_yvgPedtrVw</recordid><startdate>20150504</startdate><enddate>20150504</enddate><creator>Mereuta, A</creator><creator>Caliman, A</creator><creator>Sirbu, A</creator><creator>Iakovlev, V</creator><creator>Mickovic, Z</creator><creator>Suruceanu, G</creator><creator>Kapon, E</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20150504</creationdate><title>Increasing single mode power of 1.3-μm VCSELs by output coupling optimization</title><author>Mereuta, A ; Caliman, A ; Sirbu, A ; Iakovlev, V ; Mickovic, Z ; Suruceanu, G ; Kapon, E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-2d92b873da21327708ffee2612caf1140a5b452de06da8728bc66cc8a556eef93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mereuta, A</creatorcontrib><creatorcontrib>Caliman, A</creatorcontrib><creatorcontrib>Sirbu, A</creatorcontrib><creatorcontrib>Iakovlev, V</creatorcontrib><creatorcontrib>Mickovic, Z</creatorcontrib><creatorcontrib>Suruceanu, G</creatorcontrib><creatorcontrib>Kapon, E</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mereuta, A</au><au>Caliman, A</au><au>Sirbu, A</au><au>Iakovlev, V</au><au>Mickovic, Z</au><au>Suruceanu, G</au><au>Kapon, E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Increasing single mode power of 1.3-μm VCSELs by output coupling optimization</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2015-05-04</date><risdate>2015</risdate><volume>23</volume><issue>9</issue><spage>10900</spage><epage>10904</epage><pages>10900-10904</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>We report on the single mode emission power enhancement of 1.3-μm VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80°C, with more than 30 dB single mode suppression ratio, have been obtained.</abstract><cop>United States</cop><pmid>25969185</pmid><doi>10.1364/OE.23.010900</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record>
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title Increasing single mode power of 1.3-μm VCSELs by output coupling optimization
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T07%3A39%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Increasing%20single%20mode%20power%20of%201.3-%CE%BCm%20VCSELs%20by%20output%20coupling%20optimization&rft.jtitle=Optics%20express&rft.au=Mereuta,%20A&rft.date=2015-05-04&rft.volume=23&rft.issue=9&rft.spage=10900&rft.epage=10904&rft.pages=10900-10904&rft.issn=1094-4087&rft.eissn=1094-4087&rft_id=info:doi/10.1364/OE.23.010900&rft_dat=%3Cproquest_cross%3E1680957772%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1680957772&rft_id=info:pmid/25969185&rfr_iscdi=true