Increasing single mode power of 1.3-μm VCSELs by output coupling optimization

Increasing single mode power of 1.3-μm VCSELs by output coupling optimization

We report on the single mode emission power enhancement of 1.3-μm VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80°C,...

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Veröffentlicht in:Optics express 2015-05, Vol.23 (9), p.10900-10904
Hauptverfasser: Mereuta, A, Caliman, A, Sirbu, A, Iakovlev, V, Mickovic, Z, Suruceanu, G, Kapon, E
Format: Artikel
Sprache:eng
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Zusammenfassung:We report on the single mode emission power enhancement of 1.3-μm VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of 6.8-mW at room temperature and 2.8-mW at 80°C, with more than 30 dB single mode suppression ratio, have been obtained.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.23.010900