Effect of temperature and post-deposition annealing on Schottky barrier characterization of Bromoindium phthalocyanine/aluminum interfaces

To investigate DC electrical properties and Schottky barrier characterization between BrInPc/Al interfaces, some thin films of BrInPc in sandwich form were prepared with Al electrodes. J–V characterization showed ohmic behavior at lower voltages upto 0.3V followed by Schottky emission conduction mechanism at higher voltages. In the Schottky region two different slopes in the plot of ln (J) against V1/2 were observed and two different values of Schottky barrier height was determined for these regions. To investigate the effect of temperature on Schottky barrier behavior between BrInPc and aluminum interface, we studied the J–V characteristics of devices at the temperature range of 298–373K. By increasing the temperature, the width of Schottky depletion region decreased and the Schottky barrier height increased, and at temperatures higher than 333K the dominant conduction mechanism changed to Poole–Frenkel type. For annealed samples at 373K and 423K, the Schottky barrier height increased as the result of thermal annealing and increasing annealing temperature. The width of the Schottky depletion region decreased by annealing and increasing the annealing temperature.