The off-state gate isolation technique to improve ASET tolerance in differential analog design
A novel off-state gate RHBD technique to mitigate the single-event transient （SET） in the differential data path of analog cir- cuit is demonstrated in this paper. Simulation results present that this off-state gate technique could exploit charge sharing in differential circuits and reduce different...
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| Veröffentlicht in: | Science China. Technological sciences 2013-10, Vol.56 (10), p.2599-2605 |
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| container_title | Science China. Technological sciences |
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| creator | Hu, ChunMei Chen, ShuMing Chen, JianJun Qin, JunRui |
| description | A novel off-state gate RHBD technique to mitigate the single-event transient （SET） in the differential data path of analog cir- cuit is demonstrated in this paper. Simulation results present that this off-state gate technique could exploit charge sharing in differential circuits and reduce differential mode voltage perturbation effectively. It is indicated that this technique is more ef- fective to mitigate SET than the differential charge cancellation （DCC） technique with less penalty. |
| doi_str_mv | 10.1007/s11431-013-5343-x |
| format | Article |
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It is indicated that this technique is more ef- fective to mitigate SET than the differential charge cancellation （DCC） technique with less penalty.</description><subject>Cancellation</subject><subject>Charge</subject><subject>Circuits</subject><subject>Data paths</subject><subject>Electric potential</subject><subject>Engineering</subject><subject>Gates (circuits)</subject><subject>SET</subject><subject>Tolerances</subject><subject>Voltage</subject><subject>仿真结果</subject><subject>单粒子</subject><subject>差分电路</subject><subject>模拟电路</subject><subject>模拟设计</subject><subject>电压扰动</subject><subject>隔离技术</subject><issn>1674-7321</issn><issn>1869-1900</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkE1vGyEQhldRI8VK8wNyI7deaAbYBfYYWemHFKmHutcglh3WRGuIYV2l_75YtnJsOcAgPe_M6GmaWwafGYC6L4y1glFggnaiFfTtolkxLXvKeoAPtZaqpUpwdtXclPIC9QjdA2tXzfNmiyR5T8tiFyTT8QolzXYJKZIF3TaG_QHJkkjYveb0G8nDz8dN_c-YbXSVjmQM3mPGuAQ7ExvtnCYyYglT_NhcejsXvDm_182vL4-b9Tf69OPr9_XDE3VCw0K7XkotrZODH0bNtewGwNahHyUTrZO9tgAdV8zZVvpRecHdAOAFOiv1MIrr5tOpb12xrlsWswvF4TzbiOlQTDWggTOu1P_RjkMvesV4RdkJdTmVktGb1xx2Nv8xDMzRvDmZN9W8OZo3bzXDT5lS2ThhNi_pkKuT8s_Q3XnQNsVpX3Pvk1rFVc87Lf4CA_qSBA</recordid><startdate>20131001</startdate><enddate>20131001</enddate><creator>Hu, ChunMei</creator><creator>Chen, ShuMing</creator><creator>Chen, JianJun</creator><creator>Qin, JunRui</creator><general>Springer Berlin Heidelberg</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7TB</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>KR7</scope></search><sort><creationdate>20131001</creationdate><title>The off-state gate isolation technique to improve ASET tolerance in differential analog design</title><author>Hu, ChunMei ; Chen, ShuMing ; Chen, JianJun ; Qin, JunRui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c380t-596686ac6bfbd82865b0e4cefd6134c698a005271ca46fd7f32cb00f3eca68bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Cancellation</topic><topic>Charge</topic><topic>Circuits</topic><topic>Data paths</topic><topic>Electric potential</topic><topic>Engineering</topic><topic>Gates (circuits)</topic><topic>SET</topic><topic>Tolerances</topic><topic>Voltage</topic><topic>仿真结果</topic><topic>单粒子</topic><topic>差分电路</topic><topic>模拟电路</topic><topic>模拟设计</topic><topic>电压扰动</topic><topic>隔离技术</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, ChunMei</creatorcontrib><creatorcontrib>Chen, ShuMing</creatorcontrib><creatorcontrib>Chen, JianJun</creatorcontrib><creatorcontrib>Qin, JunRui</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Civil Engineering Abstracts</collection><jtitle>Science China. Technological sciences</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hu, ChunMei</au><au>Chen, ShuMing</au><au>Chen, JianJun</au><au>Qin, JunRui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The off-state gate isolation technique to improve ASET tolerance in differential analog design</atitle><jtitle>Science China. Technological sciences</jtitle><stitle>Sci. China Technol. Sci</stitle><addtitle>SCIENCE CHINA Technological Sciences</addtitle><date>2013-10-01</date><risdate>2013</risdate><volume>56</volume><issue>10</issue><spage>2599</spage><epage>2605</epage><pages>2599-2605</pages><issn>1674-7321</issn><eissn>1869-1900</eissn><abstract>A novel off-state gate RHBD technique to mitigate the single-event transient （SET） in the differential data path of analog cir- cuit is demonstrated in this paper. Simulation results present that this off-state gate technique could exploit charge sharing in differential circuits and reduce differential mode voltage perturbation effectively. It is indicated that this technique is more ef- fective to mitigate SET than the differential charge cancellation （DCC） technique with less penalty.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s11431-013-5343-x</doi><tpages>7</tpages></addata></record> |
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| source | Alma/SFX Local Collection; SpringerLink Journals - AutoHoldings |
| subjects | Cancellation Charge Circuits Data paths Electric potential Engineering Gates (circuits) SET Tolerances Voltage 仿真结果 单粒子 差分电路 模拟电路 模拟设计 电压扰动 隔离技术 |
| title | The off-state gate isolation technique to improve ASET tolerance in differential analog design |
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