Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode

The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior a...

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Veröffentlicht in:Key engineering materials 2013-01, Vol.538, p.324-327
Hauptverfasser: Chen, Lei, Zhu, Xi Fang, Xu, An Cheng, Yao, Ruo He, Xiong, Chao, Lu, Xing Zhong
Format: Artikel
Sprache:eng
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Zusammenfassung:The p-CuI /n-Si heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal γ-CuI films are polycrystalline nature and observed preferential orientation along the (111) axis aligning with the growth direction. The heterojunction shows a good rectifying behavior and photovoltaic effects. The current and 1/C2 versus voltage curve of the p-CuI/ n-Si heterojunction diode was shown. The linear relationships of 1/C2 versus voltage curve imply that the built-in potential Vbi and the conduction band offset of the heterojunction ware found to be 1.5 eV and 0.98 eV, respectively. The current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at forward bias voltages. The electronic potential barrier in p-CuI/n-Si heterojunction interface higher than hole at forward bias voltages. In this voltages area, a single carrier injuction was induced and the main current of p-CuI/n-Si heterojunction is hole current.This heterojunction diode can be good used for light emission devices and photovoltaic devices.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.538.324