Anisotropic Magnetoresistive Study in Bilayer NiFe-NiO for Sensor Applications

Anisotropic Magnetoresistive Study in Bilayer NiFe-NiO for Sensor Applications

Related with the detection of weak magnetic fields, the anisotropic magnetoresistive (AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresista...

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Veröffentlicht in:Key engineering materials 2013-03, Vol.543, p.167-170
Hauptverfasser: Tremps, Enrique, Somolinos, Jose Andrés, Morón, Carlos, Garcia, Alfonso
Format: Artikel
Sprache:eng
Schlagworte:
Anisotropy
Exchange
Ferromagnetism
Magnetization reversal
Magnetoresistance
Magnetoresistivity
Nickel
Sensors
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Zusammenfassung:Related with the detection of weak magnetic fields, the anisotropic magnetoresistive (AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni80Fe20/Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.543.167