Crystal Structures and Surface Morphologies of LaGaO sub(3)-Based Epitaxial Thin Films Grown by a Pulse Laser Deposition Method

High-quality La sub(0.84)Sr sub(0.16) Ga sub(0.26) Mg sub(0.74) O sub(3- delta ) (LSGM) epitaxial thin films were successfully grown on (100)-SrTiO sub(3) (STO) substrates at a temperature of 800 [degrees]C by a pulsed laser deposition (PLD) method with KrF excimer laser pulses at an ozone pressure...

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Veröffentlicht in:Key engineering materials 2013-09, Vol.582, p.153-156
Hauptverfasser: Matsunaga, Ayuko, Kitanaka, Yuuki, Inoue, Ryotaro, Noguchi, Yuji, Miyayama, Masaru, Itaka, Kenji
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Sprache:eng
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Zusammenfassung:High-quality La sub(0.84)Sr sub(0.16) Ga sub(0.26) Mg sub(0.74) O sub(3- delta ) (LSGM) epitaxial thin films were successfully grown on (100)-SrTiO sub(3) (STO) substrates at a temperature of 800 [degrees]C by a pulsed laser deposition (PLD) method with KrF excimer laser pulses at an ozone pressure of 1.3 x 10 super(3) Pa. X-ray diffraction rocking curve measurements showed that the LSGM films had a full-width at half-maximum (FWHM) value of 0.11 [degrees]for out-of-plane 002 reflection, which was smaller than that reported for LaGaO sub(3) films grown by atomic layer deposition methods (0.18 [degrees]). The reciprocal spaces mapping of 103 refraction showed that the LSGM films had a slightly larger lattice parameter a (out-of-plane) of 0.393 nm than a sub(//) (in-plane) of 0.391 nm.
ISSN:1013-9826
DOI:10.4028/www.scientific.net/KEM.582.153