Relaxation time and impurity effects on linear and nonlinear refractive index changes in (In,Ga)N–GaN spherical QD
By means of a combination of Quantum Genetic Algorithm and Hartree–Fock–Roothaan method, the changes in linear, third-order nonlinear and total refractive index associated with intra-conduction band transition are investigated with and without shallow-donor impurity in wurtzite (In,Ga)N–GaN spherica...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2014-10, Vol.450, p.21-24 |
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| creator | El Ghazi, Haddou Jorio, Anouar |
| description | By means of a combination of Quantum Genetic Algorithm and Hartree–Fock–Roothaan method, the changes in linear, third-order nonlinear and total refractive index associated with intra-conduction band transition are investigated with and without shallow-donor impurity in wurtzite (In,Ga)N–GaN spherical quantum dot. For both cases with and without impurity, the calculation is performed within the framework of single band effective-mass and parabolic band approximations. Impurity׳s position and relaxation time effects are investigated. It is found that the modulation of the refractive index changes, suitable for good performance optical modulators and various infra-red optical device applications can be easily obtained by tailoring the relaxation time and the position of the impurity. |
| doi_str_mv | 10.1016/j.physb.2014.05.051 |
| format | Article |
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For both cases with and without impurity, the calculation is performed within the framework of single band effective-mass and parabolic band approximations. Impurity׳s position and relaxation time effects are investigated. It is found that the modulation of the refractive index changes, suitable for good performance optical modulators and various infra-red optical device applications can be easily obtained by tailoring the relaxation time and the position of the impurity.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2014.05.051</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>(In,Ga)N ; Approximation ; Condensed matter ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Impurities ; Modulation ; Nonlinearity ; Optical properties ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Physics ; Quantum dots ; Refractive index ; Refractivity ; Relaxation time ; SQD</subject><ispartof>Physica. 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B, Condensed matter</title><description>By means of a combination of Quantum Genetic Algorithm and Hartree–Fock–Roothaan method, the changes in linear, third-order nonlinear and total refractive index associated with intra-conduction band transition are investigated with and without shallow-donor impurity in wurtzite (In,Ga)N–GaN spherical quantum dot. For both cases with and without impurity, the calculation is performed within the framework of single band effective-mass and parabolic band approximations. Impurity׳s position and relaxation time effects are investigated. 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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | (In,Ga)N Approximation Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Impurities Modulation Nonlinearity Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum dots Refractive index Refractivity Relaxation time SQD |
| title | Relaxation time and impurity effects on linear and nonlinear refractive index changes in (In,Ga)N–GaN spherical QD |
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