Relaxation time and impurity effects on linear and nonlinear refractive index changes in (In,Ga)N–GaN spherical QD

By means of a combination of Quantum Genetic Algorithm and Hartree–Fock–Roothaan method, the changes in linear, third-order nonlinear and total refractive index associated with intra-conduction band transition are investigated with and without shallow-donor impurity in wurtzite (In,Ga)N–GaN spherical quantum dot. For both cases with and without impurity, the calculation is performed within the framework of single band effective-mass and parabolic band approximations. Impurity׳s position and relaxation time effects are investigated. It is found that the modulation of the refractive index changes, suitable for good performance optical modulators and various infra-red optical device applications can be easily obtained by tailoring the relaxation time and the position of the impurity.