EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure

Triplet center with spin state S = 1 is detected in the EPR spectrum of the self-assembled 6H SiC nanostructure obtained by non-equilibrium boron diffusion into the n-type 6H SiC epitaxial layer (EL) under conditions of the controlled injection of the silicon vacancies at the temperature of T = 900°C. From the analysis of the angular dependences of the EPR spectrum and the numerical diagonalization of the spin Hamiltonian, the value of the zero-field splitting constant D and g-factor are found to be D = 1140•10-4см-1 and gpar = 1.9700, gper = 1.9964. Based on the hyperfine (hf) structure of the defect originating from the hf interaction with one 14N nuclei, the large value of the zero-field splitting constant D and technological conditions of the boron diffusion into the n-type 6H SiC EL, the triplet center is tentatively assigned to the defect center consisting of nitrogen atom and silicon vacancy.