Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability

In the present work, we studied the influence of the post-implantation annealing temperature on the performance and oxide reliability of lateral 4H-SiC MOSFETs. The maximum field effect mobility of the MOSFETs at 25°C decreases from 22.4cm2/Vs to 17.2cm2/Vs by increasing annealing temperature from 1...

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Veröffentlicht in:	Materials science forum 2013-01, Vol.740-742, p.703-706
Hauptverfasser:	Scholten, Dick, Grieb, Michael, Rambach, Martin, Noll, Stefan
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Failure Materials science MOSFETs Oxides
Online-Zugang:	Volltext
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