Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability
In the present work, we studied the influence of the post-implantation annealing temperature on the performance and oxide reliability of lateral 4H-SiC MOSFETs. The maximum field effect mobility of the MOSFETs at 25°C decreases from 22.4cm2/Vs to 17.2cm2/Vs by increasing annealing temperature from 1...
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| Veröffentlicht in: | Materials science forum 2013-01, Vol.740-742, p.703-706 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | In the present work, we studied the influence of the post-implantation annealing temperature on the performance and oxide reliability of lateral 4H-SiC MOSFETs. The maximum field effect mobility of the MOSFETs at 25°C decreases from 22.4cm2/Vs to 17.2cm2/Vs by increasing annealing temperature from 1600°C to 1800°C. Respectively, the measured meantime to failure is about one order of magnitude higher for the 1700°C annealed sample at an applied field of 8.5MV/cm compared to the 1600°C and 1800°C annealed samples. |
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| ISSN: | 0255-5476 1662-9752 1662-9752 |
| DOI: | 10.4028/www.scientific.net/MSF.740-742.703 |