Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi
In this work we investigate the effect of the aluminum p-well implant annealing process on the electrical properties of lateral 4H-SiC MOSFET transistors. The interface trap concentration was measured by quasi-static capacitive voltage (QSCV) and negative bias stress measurements on MOSFETs. We foun...
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Veröffentlicht in: | Materials science forum 2013-01, Vol.740-742, p.521-524 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this work we investigate the effect of the aluminum p-well implant annealing process on the electrical properties of lateral 4H-SiC MOSFET transistors. The interface trap concentration was measured by quasi-static capacitive voltage (QSCV) and negative bias stress measurements on MOSFETs. We found that higher annealing temperatures significantly reduce the trap density in the lower bandgap, and as a consequence the threshold voltage drift of the transistor after negative stress is reduced. |
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ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/www.scientific.net/MSF.740-742.521 |