Epitaxial growth of magnetic semiconductor EuO on silicon by molecular beam epitaxy

Epitaxial growth of magnetic semiconductor EuO on silicon by molecular beam epitaxy

The images connected by arrows show a sequence of RHEED spectra for (2x1) and (5x1) Eu on Si reconstructions followed by the 3D RHEED spectrum of EuO film grown directly on Si. The background presents the Si lattice with Eu adatoms at the interface.

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Bibliographische Detailangaben
Veröffentlicht in:Crystal research and technology (1979) 2015-03, Vol.50 (3), p.NA
Hauptverfasser: Averyanov, Dmitry V., Teterin, Peter E., Sadofyev, Yuri G., Likhachev, Igor A., Primenko, Alexey E., Tokmachev, Andrey M., Storchak, Vyacheslav G.
Format: Artikel
Sprache:eng
Schlagworte:
Crystals
Epitaxial growth
Lattices
Magnetic semiconductors
Molecular beam epitaxy
Silicon
Spectra
Three dimensional
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Zusammenfassung:The images connected by arrows show a sequence of RHEED spectra for (2x1) and (5x1) Eu on Si reconstructions followed by the 3D RHEED spectrum of EuO film grown directly on Si. The background presents the Si lattice with Eu adatoms at the interface.
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.201570005